3sk41 Datasheet ((full)) <UHD 2024>
Gate 1 receives the incoming RF signal while Gate 2 is driven by a local oscillator (LO), providing highly isolated frequency conversion.
Sourcing authentic old-stock units can be navigated via specialized component vendors such as Littlediode or Utsource . Always confirm the physical package type matches your PCB footprint before purchasing, as some similarly named variants may ship in surface-mount mini-mold packages. If you are replacing a faulty component, tell me:
Whether you need a for biasing the dual gates.
This circuit is ideal for FM radio (88-108 MHz) or aircraft band (118-136 MHz). 3sk41 datasheet
The second gate acts as a shield between the input gate and the drain, significantly reducing Miller effect capacitance. This provides better stability and higher gain at VHF frequencies. Automatic Gain Control (AGC):
In receiver front-ends, Gate 1 receives the weak antenna signal. Gate 2 is held at a constant DC bias. The low noise figure ensures that the transistor amplifies the signal without adding significant background static. Automatic Gain Control (AGC) Stages
The 3SK41 is an N-channel dual-gate silicon MOSFET designed primarily for high-frequency applications, such as RF (Radio Frequency) and microwave circuits. This component was originally manufactured by Japanese electronics leaders like NEC and Hitachi, and it remains a popular choice for hobbyists and engineers working with legacy RF designs. Technical Specifications Gate 1 receives the incoming RF signal while
This comprehensive guide breaks down the technical specifications, pin configuration, and practical applications of the 3SK41. 1. Overview and Key Features
3SK41 1Pcs 3SK41 Encapsulation:Can4,N-Channel Dual Gate Mosfet
Known for high gain, low noise figure, and high transconductance. Typical Uses: VHF/UHF tuners and receiver front-ends. Common Information Found in 3SK41 Datasheets: Manufacturer: NEC/Hitachi/Motorola Package Type: CAN-4 / Metal Can If you are replacing a faulty component, tell
Understanding the 3SK41 datasheet requires looking at its electrical ratings. Note that these are standard specifications, but minor variations might exist depending on the manufacturer (NEC vs. Hitachi). Approximate Value VDScap V sub cap D cap S end-sub Gate 1-Source Voltage VG1Scap V sub cap G 1 cap S end-sub Gate 2-Source Voltage VG2Scap V sub cap G 2 cap S end-sub Drain Current IDcap I sub cap D 20mA - 30mA Power Dissipation PDcap P sub cap D Forward Transconductance yfsy sub f s end-sub 10mS - 20mS Noise Figure ~ 2dB - 4dB (@ 100MHz) 3. 3SK41 Pinout and Physical Configuration
The is a classic, high-performance N-channel dual-gate Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) manufactured by prominent semiconductor pioneers such as NEC , Hitachi, and Motorola. Primarily packaged in a hermetically sealed metal TO-72 (CAN-4) enclosure , this device is legendary in legacy RF (Radio Frequency) engineering for its high switching speeds, exceptionally low power dissipation, and outstanding noise-performance balance.
The 3SK41 is engineered to handle low-noise, high-gain amplification in the very high frequency (VHF) and ultra-high frequency (UHF) spectrums. Because it utilizes a dual-gate architecture, it provides superior automatic gain control (AGC) characteristics and excellent isolation between the input and output stages.